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기술보고서

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타이틀	A Comparison of MOCLD With PLD BaxSr1-xTiO3 Thin Films on LaAlO3 for Tunable Microwave Applications
저자	F.W. Van Keuls, C.H. Mueller, R.R. Romanofsky, J.D. Warner, F.A. Miranda, and H. Jiang
Keyword	Ferroelectric; Tunable; Microwave
URL	http://gltrs.grc.nasa.gov/reports/2002/TM-2002-210906.pdf
보고서번호	NASA TM-2002-210906
발행년도	2002
출처	NASA Glenn Technical Reports Server
ABSTRACT	Historically, tunable dielectric devices using thin crystalline BaxSr1-xTiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293?phase shift with 53 V/mm dc bias and a figure of merit of 47?dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047? The best FWHM of these MOCLD BST films has been measured to be 0.058?