국내 최대 기계 및 로봇 연구정보

기술보고서

기술보고서 게시판 내용
타이틀	SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions
저자	James L. Smialek, Raymond C. Robinson, Elizabeth J. Opila, Dennis S. Fox,and Nathan S. Jacobson
Keyword	Silicon carbide; Ceramic composites; Oxidation; Scale volatility; Combustors
URL	http://gltrs.grc.nasa.gov/reports/1999/TP-1999-208696.pdf
보고서번호	NASA TP-1999-208696
발행년도	1999
출처	NASA Glenn Research Center
ABSTRACT	Silicon carbide (SiC) and Si3N4 materials were tested in various turbine engine combustion environments chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high-speed aircraft. Representative chemicalvapor-deposited (CVD), sintered, and composite materials were evaluated by furnace and high-pressure burner rig exposures. Although protective SiO2 scales formed in all cases, the evidence presented supports a model based on paralinear growth kinetics (i.e., parabolic growth moderated simultaneously by linear volatilization). The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were thus used to map SiO2 volatility (and SiC recession) over a range of temperatures, pressures, and velocities. The functional dependency of material recession (volatility) that emerged followed the form . These empirical relations were compared with rates predicted from the thermodynamics of volatile SiO and SiOxHy reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 mm/hr is predicted at 1200 to 1400 캜, far in excess of acceptable long-term limits.