국내 최대 기계 및 로봇 연구정보

기술보고서

기술보고서 게시판 내용
타이틀	Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors
저자	Teverovsky, Alexander
Keyword	CAPACITORS;; CHIPS (ELECTRONICS); COMPRESSIBILITY;; DEGRADATION;; DIELECTRICS;; FAILURE;; LEAKAGE;; PRINTED CIRCUITS;; RELIABILITY;; RISK;; TANTALUM;; THERMODYNAMICS;; VOLUMETRIC EFFICIENCY
URL	http://hdl.handle.net/2060/20120010364
보고서번호	GSFC.JA.00453.2012
발행년도	2012
출처	NTRS (NASA Technical Report Server)
ABSTRACT	Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.