국내 최대 기계 및 로봇 연구정보

기술보고서

기술보고서 게시판 내용
타이틀	Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs.
저자	Lauenstein, Jean-Marie;; Goldsman, Neil;; Liu, Sandra;; Titus, Jeffrey L.;; Ladbury, Raymond L.;; Kim, Hak S.;; Phan, Anthony M.;; LaBel, Kenneth A.;; Zafrani, Max;; Sherman, Phillip
Keyword	FIELD EFFECT TRANSISTORS;; GATES (CIRCUITS); HEAVY ELEMENTS;; HEAVY IONS;; ION IRRADIATION;; LINEAR ENERGY TRANSFER (LET); METAL OXIDE SEMICONDUCTORS;; RADIATION DAMAGE;; RADIATION HARDENING;; SINGLE EVENT UPSETS;; SPACECRAFT ELECTRONIC EQUIPMENT;; SUBSTRATES
URL	http://hdl.handle.net/2060/20120008333
보고서번호	GSFC.JA.5840.2012
발행년도	2012
출처	NTRS (NASA Technical Report Server)
ABSTRACT	The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.