국내 최대 기계 및 로봇 연구정보

기술보고서

기술보고서 게시판 내용
타이틀	Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rupture and Single- Event Burnout
저자	Scheick, Leif
Keyword	BURNOUT;; DOSAGE;; DRAINAGE;; FIELD EFFECT TRANSISTORS;; METAL OXIDE SEMICONDUCTORS;; RECTIFIERS
URL	http://hdl.handle.net/2060/20110023471
보고서번호	JPL-Publ- 11-7
발행년도	2011
출처	NTRS (NASA Technical Report Server)
ABSTRACT	Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The SCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition standards and requirements. The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.